AIMZHN120R120M1TXKSA1 Single FETs, MOSFETs_Discrete Semiconductor Devices_Electronic Components_Integrated Electrical Appliances_Module Circuits_Computer Accessories

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AIMZHN120R120M1TXKSA1

Single FETs, MOSFETs

IR (Infineon Technologies)

SIC_DISCRETE

Tube

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$8.2610

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Total price

$12.2870

$10.5270

$105.2700

240

$8.2610

$1,982.6400

720

$7.7440

$5,575.6800

1200

$6.9740

$8,368.8000

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product details

AIMZHN120R120M1TXKSA1

Part number：

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AIMZHN120R120M1TXKSA1

Single FETs, MOSFETs

IR (Infineon Technologies)

SIC_DISCRETE

Single FETs, MOSFETs

Tube

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	IR (Infineon Technologies)
Series	-
Package	Tube
Product Status	ACTIVE
Package / Case	TO-247-4
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	SiC (Silicon Carbide Junction Transistor)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Rds On (Max) @ Id, Vgs	150mOhm @ 7A, 20V
Power Dissipation (Max)	133W (Tc)
Vgs(th) (Max) @ Id	5.1V @ 2.2mA
Supplier Device Package	PG-TO247-4-14
Grade	Automotive
Drive Voltage (Max Rds On, Min Rds On)	18V, 20V
Vgs (Max)	+23V, -5V
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds	458 pF @ 800 V
Qualification	AEC-Q101